Tunable electronic properties of silicon nanowires under strain and electric bias

Alexis Nduwimana,Xiao-Qian Wang

doi:10.1063/1.4890674

Abstract

The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.

Highlights

The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory
Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices
A longitudinal electric bias modulates the band gap, while a transverse electric field leads to a transformation from an indirect band gap to a direct gap, making the NWs suitable for optoelectronic applications.[19]

Summary

Introduction

Tunable electronic properties of silicon nanowires under strain and electric bias Alexis Nduwimana[1,2] and Xiao-Qian Wang1,a 1Department of Physics and Center for Functional Nanoscale Materials, Clark Atlanta University, Atlanta, Georgia 30314, USA 2Georgia Perimeter College, Decatur, Georgia 30034, USA The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.

Results

Conclusion