Tunable electronic properties of silicene based heterojunctions with ultrathin high-к La2O3 gate dielectric

Abstract

The silicene/La 2 O 3 heterojunctions envision promising applications in novel integrated functional nanodevices . The electronic properties of silicene , La 2 O 3 , and silicene/La 2 O 3 heterojunctions are investigated by first-principles calculations. The silicene/La-terminated La 2 O 3 heterojunction presents a 1.753 eV band gap, which is desired for silicene-based semiconductor devices. The effects of biaxial strain and external electric field are studied for the band structure of silicene/La 2 O 3 heterojunction. The band gap values of silicene/La 2 O 3 heterojunction could be effectively modulated. These findings indicate the potential application prospects of silicene-based field effect transistor with La 2 O 3 gate dielectric in nanoscale devices. • The silicene/La-terminated La 2 O 3 heterojunction presents a desired 1.753 eV band gap. • External electric field induces semiconductor–metal transitions. • The band gap values of silicene/La 2 O 3 heterojunction could be effectively modulated by biaxial strains. • The silicene/La 2 O 3 heterojunction has a potential application in silicene-based MOSFETs.