Abstract
Single–layer and mono–component doped graphene is a crucial platform for a better understanding of the relationship between its intrinsic electronic properties and atomic bonding configurations. Large–scale doped graphene films dominated with graphitic nitrogen (GG) or pyrrolic nitrogen (PG) were synthesized on Cu foils via a free radical reaction at growth temperatures of 230–300 °C and 400–600 °C, respectively. The bonding configurations of N atoms in the graphene lattices were controlled through reaction temperature, and characterized using Raman spectroscopy, X–ray photoelectron spectroscopy and scanning tunneling microscope. The GG exhibited a strong n–type doping behavior, whereas the PG showed a weak n–type doping behavior. Electron mobilities of the GG and PG were in the range of 80.1–340 cm2 V−1·s−1 and 59.3–160.6 cm2 V−1·s−1, respectively. The enhanced doping effect caused by graphitic nitrogen in the GG produced an asymmetry electron–hole transport characteristic, indicating that the long–range scattering (ionized impurities) plays an important role in determining the carrier transport behavior. Analysis of temperature dependent conductance showed that the carrier transport mechanism in the GG was thermal excitation, whereas that in the PG, was a combination of thermal excitation and variable range hopping.
Highlights
Stacking patterns, electronic structures and couplings since the multilayer graphene combining with multi–components nitrogen was adopted[5]
Analysis of temperature dependent conductance showed that the carrier transport mechanism was a thermal excitation process for the graphitic N dominated graphene, whereas it was a combination of thermal excitation and variable range hopping for the pyrrolic N dominated graphene
Growth of the N–doped graphene film on Cu foils via the free radical reaction was previously reported by our group[25]
Summary
Stacking patterns, electronic structures and couplings since the multilayer graphene combining with multi–components nitrogen was adopted[5]. Synthesis of a single bonding configuration of N doped monolayer graphene is of vital importance to reveal the influence of N bonding configuration on redistribution of the spin and charge states, as well as the electronic structures of the doped graphene. The single bonding configuration for the N doped graphene film is expected to be an excellent platform for electronic devices, oxygen reduction reaction, batteries, sensors and supercapacitors[9,10,11,12,13]. The bonding configurations for the N atoms are strongly influenced by the growth parameters, such as precursors, catalysts, flow rates and growth temperatures. As–grown mono–component doped graphene film is an important platform for the understanding of the relationship between the bonding configurations and its intrinsic physics of N–doped graphene, as well as development of graphene–based devices
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