Abstract
AbstractHeterostructure of various 2D semiconductors have attracted extensive attention due to their tunable electronic properties and tremendous application potential. Using first‐principles calculations, the electronic properties of a GeP/graphene van der Waals heterostructure are studied and the physical mechanism of its properties modulated by strain and electric field are examined. The calculations reveal that not only the electronic properties of the GeP/Graphene heterostructure, but also the position of the graphene's Dirac cone, can be modulated by uniaxial strain. Interestingly, uniaxial strain can induce p‐type to n‐type Schottky contact transition and its band alignment allows photocatalytic water splitting. The band edges of the GeP relative to that of graphene are effectively modulated by transverse electric field. These findings provide comprehensive understanding of fundamental properties of the GeP/graphene heterostructure and its tunable electronic properties through strain engineering and electric fields, which will be helpful to the application of 2D GeP‐based nanodevices.
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