Abstract
Tunability of the optical absorption spectrum with electrical bias in GaAs doping super-lattices (n-i-p-i crystals) is demonstrated by both photoconductivity and direct transmis-sion measurements. A linear change of transmission of up to 22% is achieved at 0.89 μm wavelength through a 2.1 μm thick n-i-p-i crystal by varying the p-n junction bias between -2.0 V and 0.6 V. Highly tunable and efficient electroluminescence is also observed in strongly doped n-i-p-i crystals at room temperature with peak energies shifted more than 600 meV below the bulk bandgap (λ > 1.55 μm).
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