Abstract
Authors acknowledge the support from King Fahd University of Petroleum & Minerals (KFUPM); King Abdulaziz City for Science and Technology (KACST), (grant nos. EE2381 and KACST TIC R2-FP-008); Partial support from King Abdullah University of Science and Technology (KAUST) baseline funding (grant nos. BAS/1/1614-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01); and KAUST-KFUPM Special Initiative (KKI) Program (REP/1/2878-01-01).
Highlights
Two-wavelength diode lasers has applications in different multidisciplinary fields like interferometry [1], optical communication [2], sensing and imaging [3], spectroscopy [4], terahertz (THz) signal generation [5], broadband wireless communication [6], etc
These figures correspond to respective smallest (Fig. 2(a) and (c)) and largest (Fig. 2(b) and (d)) mode spacing or calculated frequency difference from our proposed systems
A minimum mode spacing, λ, of 0.43 (0.98) nm, corresponding to 0.47 (1.07) THz beat frequency, f, at an injection current 36 (37) mA is demonstrated by the PDR system at room temperature, 20 ◦C
Summary
Two-wavelength diode lasers has applications in different multidisciplinary fields like interferometry [1], optical communication [2], sensing and imaging [3], spectroscopy [4], terahertz (THz) signal generation [5], broadband wireless communication [6], etc. M. Shamim et al.: Tunable Dual-Wavelength Self-injection Locked InGaN/GaN Green Laser Diode vertical cavity surface emitting lasers (VCSEL) [16] have been reported in the literature. Among ECDL systems, Littrow configuration has been widely utilized to realize dual wavelength laser system to demonstrate wideband tunable THz beat frequency [10].
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