Abstract
The thermal stability and optical bandgap of the amorphous Sb4Te film can be improved significantly by combining with VO2, which leads to a high crystallization temperature (around 220 °C), good data retention (ten-year data retention above 130 °C), and high amorphous resistance. The crystallization mechanism of Sb4Te changes from growth-dominated mode into nucleation-dominate one, which is confirmed by in situ microstructure observation experimentally and crystallization kinetics index theoretically, due to the long-range orders of Sb–Te and Sb–Sb bonds disorganized by the introduction of VO2 nano-grid framework. The Sb4Te crystallites can be refined and confined in the VO2 nano-grid framework. VO2–Sb4Te films with less than 15 at.% of VO2 maintain the high crystallization speed. The nano-grid framework of VO2 enables an efficient way to invade the long-order bonds of Sb4Te, which improves the rigid trade-off between thermal stability and crystallization speed. It provides a novel clue for optimizing other phase-change materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
