Abstract

On basis of the first-principles calculations, we have studied the effects of hole doping and biaxial tensile strain on the electronic and magnetic properties of monolayer of platinum diselenide (PtSe2). Due to the large density of states near the valence band edge, this nonmagnetic monolayer semiconductor switches to a ferromagnetic half metal within a small range of hole doping. With an increase of hole density, average magnetic moment per carrier also increases and reaches at its maximum value over a specific range of carrier density, while the system remains in a half metal state before the magnetic moment abruptly begins to fall. We also predict a critical value of biaxial tensile strain (5%) for doped monolayer PtSe2, after which the optimal carrier density becomes constant, while the magnetic moment/carrier gradually increases and the ferromagnetic state of the system becomes more stable with increasing values of strain. This work paves a possible way to engineer the magnetic properties of the two-...

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