Abstract
Abstract Based on the effective-mass approximation, the built-in electric field, exciton states and optical properties are investigated theoretically in the wurtzite (WZ) ZnO/MgZnO quantum wells (QWs). Numerical results show that the built-in electric field, exciton states and optical properties can be tuned effectively by the MgZnO barrier layer in the QWs. When the MgZnO barrier width is decreased, the built-in electric field F w and the interband emission wavelength are decreased. However, the exciton binding energy and the electron–hole recombination rate increase with increasing the MgZnO barrier width. In particular, the electron–hole recombination rate approaches zero when the QWs structural parameters are large in the WZ ZnO/MgZnO QWs.
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