Abstract
A three-dimensional broadband absorber structure was proposed based on the crossed-oval shape of graphene (COSG) on a wafer layout. This structure consisted of silicon/gold/silica wafer and a superstrate layer of graphene patterns in the form of crossed-oval placed on top of the wafer. The effect of geometrical parameters on the absorption was studied. Results show that this structure can absorb over 99% of the incoming light over a broad range of THz frequencies. The absorption peaks were fine-tuned by changing the geometrical and physical parameters. This property is vital and desirable in optical detectors, chemical sensors, and other optical devices.
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