Abstract
The tunability of band offsets in ZnSe/GaAs(001) heterovalent heterostructures is investigated. The interface composition, Ga/As, is controlled by means of Zn or Se treatment or by thermal etching of the GaAs surfaces before the growth of ZnSe. Consequently, it is revealed by X-ray photoemission spectroscopy that artificial control of Ga/As from 1.0 to 2.8 leads to variation of the valence band offsets from 0.6 to 1.1 eV. Based on the electron counting model and the layer-attenuation model, a structural model which is responsible for the Ga-rich interface and for the increase of valence band offset is proposed, in which the As plane just below the interface consists of As, anti-site Ga and As vacancies. The electronic properties of the n-ZnSe/p+-GaAs heterojunction diodes (HDs) provide further evidence of the tunability of the band offsets at the interface, that is, the diffusion potentials in the HDs are modified according to the interface compositions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
