Abstract
Opening a sizable band gap in the zero-gap silicene is a key issue for its application in nanoelectronics. Based on first-principles calculations, we find that the weak interaction between silicene and Gallium phosphide (GaP) monolayer can open a gap in gapless silicene. At the same time, the gap changes with the interlayer spacing changed. The band gap changes in a large range in silicene and GaP heterobilayer (Si/GaP HBL). These means the HBLs is a good material to design effective FETs out of silicene on GaP monolayer.
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