Abstract
A new principle for supplying volatile precursors to MOCVD gas-phase chemical deposition systems is proposed, based on a two-stage evaporation of an organic solution of precursors from a soaked cotton thread, which passes sequentially through the zones of evaporation of the solvent and precursors. The technological capabilities of TSF-MOCVD (Thread-Solution Feed MOCVD) are demonstrated based on examples of obtaining thin epitaxial films of СеО2, h-LuFeO3 and thin-film heterostructures β-Fe2O3/h-LuFeO3. The results of studying the obtained films by X-ray diffraction, energy dispersive X-rayanalysis, and high- and low-resolution transmission microscopy are presented. Using the TSF module, one can finely vary the crystallisation conditions, obtaining coatings of the required degree of crystallinity, as evidenced by the obtained dependences of the integral width of the h-LuFeO3 reflection on the film growth rate. Based on the TEM and XRD data, it was concluded that β-Fe2O3 grows epitaxially over the h-LuFeO3 layer. Thus, using TSF-MOCVD, one can flexibly change the composition of layered heterostructures and obtain highly crystalline epitaxial films with a clear interface in a continuous deposition process
Highlights
Thin-film technologies underlie the development of many scientific and technical fields, and their continuous improvement gives rise to new possibilities for creating modern materials and thin-film devices with a precisely specified architecture and physical properties
The metalorganic precursor vapour deposition (MOCVD) method started to be intensively developed at the end of the 80s of the last century due to the need to obtain thin HTSC films [6]
We have implemented a new version of the MOCVD with an original method for supplying volatile precursors to the reactor, called TSD-MOCVD, which combines the advantages of liquid-phase and solid-state single-source MOCVD variants
Summary
Thin-film technologies underlie the development of many scientific and technical fields, and their continuous improvement gives rise to new possibilities for creating modern materials and thin-film devices with a precisely specified architecture and physical properties. The MOCVD method started to be intensively developed at the end of the 80s of the last century due to the need to obtain thin HTSC films [6] Over the years, this method has been demonstrated to be extremely flexible in producing films of a wide variety of compositions and purposes, as well as the ability to deposit coatings with high uniformity and over large areas. The mixture of precursors is sharply heated to a temperature providing the simultaneous transition of all precursors into a vapour, including the least volatile of them This approach can be implemented in two ways, which differ in the aggregate states of the mixture of precursors: either an aerosol of an organic solution of a mixture of precursors [10, 11], or a fine mechanical mixture of solid precursors are used [12, 13]. It is clear that this method is of little use for the reproducible production of films of reducible oxides, oxides with a narrow region of oxygen homogeneity, and other films with functional properties sensitive to residual carbon
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