TSE: Two-Step Elimination for MLC STT-RAM Last-Level Cache

Abstract

Spin-transfer torque RAM (STT-RAM) is an emerging non-volatile memory that has been recognized as the potential candidate to replace SRAM. Compared with SRAM, STT-RAM has advantages of non-volatility, zero leakage power, and higher density. To further improve data density, multi-level cell (MLC) STT-RAM that can store two bits per cell has been proposed. However, writing hard bit of a cell would write its soft bit to the same value as well, which complicates the write operation of MLC STT-RAM. Although two-step transition (TT) is usually adopted to ensure the data correctness during a write operation, it incurs overhead of additional energy consumption and performance degradation. In this article, we propose the two-step elimination (TSE) scheme to eliminate TTs while ensure data integrity. By flipping hard bits of the cells that suffered from TTs, the TSE scheme could reduce TTs to soft transitions (STs) or zero transitions (ZTs), which incur much less overhead than TTs. To keep track of the flipped cells effectively, 6-bit TSE tag is introduced. We exploit tag reversing and advanced mode of the TSE scheme to further improve the performance. The experimental results showed that our scheme could reduce 61 percent TTs and achieve significant lifetime improvement, compared with conventional MLC STT-RAM (CMLC) scheme.