Tsallis non-extensive statistics and multifractal analysis of the dynamics of a fully-depleted MOSFET nano-device

Abstract

In this study Tsallis non-extensive statistics and multifractal analysis for the physical description and understanding of the Random Telegraph Noise (RTN), observed in UTBB FD-SOI MOSFET current timeseries is presented. Specifically, we estimate the Tsallis q-triplet and q-entropy production, the Hurst exponent, the multifractal singular spectrum and other topological and dynamical characteristics of this MOSFET-current dynamics as a function of the drain voltage. The analysis shows the existence of microscopic intermittent turbulence and anomalous diffusion processes, underlying the noisy timeseries. The relevant results indicate the existence of a self-organized critical behavior manifested by a percolation mechanism and a fractional transport process. The multifractal character of the dynamics was demonstrated and explained by the maximization of the Tsallis q-entropy function. Final, our analysis revealed the existence of a non-equilibrium topological transition process, taking place when the drain voltage increases and satisfies the basic principles of Tsallis non-extensive statistical theory.