Truly self-consistent solution of Kohn-Sham equations for extended systems with inhomogeneous electron gas

Abstract

The density functional approach in the Kohn-Sham approximation is widely used to study properties of many-electron systems. Due to the nonlinearity of the Kohn-Sham equations, the general self-consistent solution method for infinite systems involves iterations with alternate solutions of the Poisson and Schrödinger equations. One of problems with such an approach is that the charge distribution, updated by solving the Schrodinger equation, may be incompatible with the boundary conditions of the Poisson equation for Coulomb potential. The resulting instability or divergence manifests itself most appreciably in the case of infinitely extended systems because the corresponding boundary-value problem becomes singular. In this work the stable iterative scheme for solving the Kohn-Sham equations for infinite systems with inhomogeneous electron gas is described based on eliminating the long-range character of the Coulomb interaction, which causes the tight coupling of the charge distribution with the boundary conditions. This algorithm has been previously successfully implemented in the calculation of work function and surface energy of simple metals in the jellium model. Here it is used to calculate the energy spectrum of quasi-two-dimensional electron gas in the accumulation layer at the semiconductor surface n-InAs. The electrons in such a structure occupy states that belong to both discrete and continuous parts of the energy spectrum. This causes the problems of convergence in the usually used approaches, which do not exist in our case. Because of the narrow bandgap of InAs, it is necessary to take the nonparabolicity of the conduction band into account; this is done by means of a new effective mass method. The calculated quasi-two-dimensional energy bands correspond well to experimental data measured by the angle resolved photoelectron spectroscopy technique.