Abstract
We demonstrate true-blue (450–460 nm) nitride-based laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE) on c-plane GaN substrates operating in continuous wave mode. The maximum optical power measured for these LDs is 80 mW, while the lifetime at the optical power of 10 mW is longer than 2000 h. We present a new LD design consisting of a separate confinement heterostructure with GaN claddings and thick In0.08Ga0.92N waveguides. We show that the key element responsible for the improvements in performance of the true-blue PAMBE LDs is the growth of InGaN quantum wells using a high nitrogen flux.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
