Abstract
Ferroelectric single crystals of 0.64Pb(Mg1/3Nb2/3)O3-0.36PbTiO3 (PMN-PT), which have attracted lot of attention because of its excellent ferroelectric and piezoelectric response, has been successfully grown in the vicinity of morphotropic phase boundary, using high temperature solution method with PbO/B2O3 as flux. The crystals were characterized for its dielectric, ferroelectric, piezoelectric and pyroelectric properties along with the investigation of its domain structure. A high Curie temperature (Tc = 190 °C) was observed in the dielectric study. Well-saturated ferroelectric hysteresis loops with high remanent polarization, good switching and fatigue resistant nature indicated the high ferroelectric quality of the crystals. A high value of piezoelectric coefficient (d33∗ = 1398 pm/V) was obtained from the butterfly loops. True-remanent hysteresis study unveiled the practically usable polarization value, which actually serves as memory component in devices and has never been reported for PMN-PT crystals. Time-dependent compensated hysteresis analysis was carried out to study the resistive-leakage nature of the grown crystals which is also a new study for this system. Weibull statistics was used to analyze the distribution of hardness number and to find the values of critical load for the flux grown PMN-PT crystals which helps to critically analyze materials suitability for device fabrication.
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