Abstract
This paper reports the true ferroelectric characteristics of BTO as a function of temperature and interface charge density at the BTO/Nb:STO interface. True ferroelectric switching characterization of BTO at 100 kHz shows a reduction in average remanent polarization from 4.79 ± 0.14 to 1.81 ± 0.13 μC/cm2 as the temperature is increased from 200 to 350 K. An activation energy of 0.082 ± 0.026 eV is reported for the BTO/Nb:STO interface. Trapping at the interface under positive and negative ferroelectric polarization states has been characterized, with polarization specific trap densities up to 1.75 × 1013 cm−2 eV−1 and interfacial trap densities up to 3.5 × 1012 cm−2 eV−1 reported.
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