True Energy-Performance Analysis of the MTJ-Based Logic-in-Memory Architecture (1-Bit Full Adder)

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The use of spin-transfer torque (STT) devices for memory design has been a subject of research since the discovery of the STT on MgO-based magnetic tunnel junctions (MTJs). Recently, MTJ-based computing architectures such as logic-in-memory have been proposed and claim superior energy-delay performance over static CMOS. In this paper, we conduct exhaustive energy-performance analysis of an STT-MTJ-based logic-in-memory (LIM-MTJ) 1-bit full adder and compare it with its corresponding CMOS counterpart. Our results show that the LIM-MTJ circuit has no advantage in energy-performance over its equivalent CMOS designs. We also show that the MTJ-based logic circuit requiring frequent MTJ switching during the operation is hardly power efficient. </para>