Abstract
Triplet exciton states in a-Si:H, a-Si,C:H and a-Si, N:H were investigated by the steady-state and time-resolved optically detected magnetic resonance techniques. The existence of triplet exciton states in a-Si:H and a-Si, N:H materials was confirmed, for the first time from these measurements. The extent of the electron orbitals in the triplet exciton state and its averaged lifetime in these materials were estimated to be ∼10 A and ∼1 ms, respectively. A singlet-triplet exciton splitting energy in a-Si:H was also estimated to be ∼0.15 eV. An impurity-related center and a self-trapped exciton center are considered as the origin for the triplet exciton centers in these materials.
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