Abstract
This work presents the characterization of triple Gate nMOS FinFET using high frequency Capacitance versus Voltage (CV) curves. Front channel capacitance as a function of the front and the back gate voltage is analyzed and used to determine Effective Oxide Thickness (EOT), fin height (Hfin) and the fin doping concentration (Nfin). Three-dimensional numerical simulations are performed to validate the proposed methods and also evaluated their sensitivity. The experimental results are in agreement with simulations results.
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