Abstract
AbstractAlxGa1‐xN/GaN (Si doped or undoped) with the Al content in the composition range of 0.046 ≤ x ≤ 0.164 grown on the c sapphire face by atmospheric pressure MOCVD method were studied by high resolution x‐ray diffraction including symmetrical and asymmetrical ω/2θ scans and reciprocal space maps. A high sensitivity to small inhomogeneities of the layer thickness and lattice mismatch between AlGaN and GaN is reported, recognised as changes in the interference pattern of the diffraction peak observed across the sample. They are very well correlated with optical properties derived from independent photoreflectivity measurements. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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