Abstract
We have measured the current‐voltage (I(V)) characteristics and the photoluminescence emission of GaAs‐GaAlAs n‐i‐n double barrier diodes. We have observed a pre‐resonance shoulder in the I(V) curves under high laser intensities. We have also detected negative charged excitons in the photoluminescence spectra under the same bias voltage. The pre‐resonance shoulder was associated to the dissociation of these complexes either by thermal excitation or by scattering with “free” carriers in the quantum well. A simple phenomenological rate equation model allows us to explain the kinetics of excitonic complexes on double barrier devices.
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