Abstract
Silicon on Insulator (SOI) is a well-established photonic platform that is of interest to photonic integrated circuits (PICs) due to its compatibility with existing fabrication processes used in the manufacture of electronic integrated circuits. Although SOI offers a high refractive index contrast that enables strong optical confinement of the propagating optical mode in the silicon layer, the performance of the photonic circuit components (such as, for example, ring resonators) is significantly dependant on fabrication tolerance. This can result in ring resonances that substantially deviate from the designed ones. It is therefore advantageous to be able to trim or tune such components post-processing, so as to adjust a resonance to the desired wavelength.
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