Abstract
The use of trimethylamine alane (TMAAl) as an alternative to trimethylaluminum (TMAl) for low-pressure metalorganic vapor-phase epitaxy (MOVPE) of AlGaAs thin films has been studied in detail. AlGaAs layers were grown in a horizontal reaction chamber at 20–110 mbar with linear flow velocities as high as 3 m/s and growth temperatures in the range 650 ≤ T g≤750°C. Wafer thickness uniformity is acceptable only for the highest linear flow velocities. The 12 K photoluminescence spectra of the layers exhibit intense and narrow bound-exciton emission throughout the growth temperature range investigated. The luminescence linewidths observed are the narrowest to date for MOVPE-grown Al x Ga 1- x As with x≥0.25. To assess the viability of this new source for the growth of advanced optoelectronic devices, several optically-pumped vertical-cavity surface-emitting laser structures were grown using TMAAl extensively. Room temperature lasing at 850 nm was reproducibly obtained, with a threshold pumping power comparable to similar structures grown by molecular beam epitaxy in our laboratories.
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