Triisopropylindium for OMVPE growth

Abstract

The organometallic vapor phase epitaxial (OMVPE) growth of In-containing III–V semiconductors typically uses trimethylindium (TMIn). However, TMIn suffers from several problems. This work reports the first decomposition and OMVPE growth studies for a newly developed indium source, triisopropylindium (TIPIn). The decomposition study shows that the temperature for 50% decomposition is ∼ 110°C for TIPIn in a He ambient, much lower than for TMIn. InAs epilayers with good surface morphologies were obtained at temperatures as low as 300°C. The necessary V/III ratio increases as the growth temperature is decreased, due to the incomplete decomposition of AsH 3 at low temperatures. Since TIPIn contains C 3H 7 radicals which are far less reactive than the CH 3 radicals in TMIn, the InAs grown using TIPIn has carbon concentrations several orders of magnitude lower than when TMIn is used.