Abstract
AbstractGrowing conditions for TGS single crystals doped with Cu or Co ions are given in a table. ε and tg δ values in growth pyramids depend on crystal growing temperature and the incorporated impurity: Cu2+ ions increase the temperature hysteresis of the dielectric permeabilty. Incorporation of Cu2+ and Co2+ ions considerably decreases the difference in the values ε at 25°C in crystals grown at different temperature.
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