Abstract
Boron nitride films were deposited onto Si substrates by hot filament chemical vapor deposition. The Tris(dimetylamino)borane (B[N(CH3)2]3) was used as source precursor, and the ammonia gas was used as the extra nitrogen source to increase the N concentration in the films. The bias was applied on the substrate stage to obtain the cubic phase of boron nitride. Structures and compositions of the films were investigated by energy dispersive X-ray (EDX) analysis and Raman spectroscopy. BN films contain hexagonal structures were deposited. To verify whether the films can be applied to the microforming die for forming pure titanium, the ball-on-disk test was carried out with pure titanium as the counterpart. The interfacial behavior between the films and pure titanium was also investigated by observe the wear track after the ball-on-disk test. The result shows that there was no titanium adhesion on the wear track when BN films were remained.
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