Abstract
Chemical mechanical planarization (CMP) is a key processing step in the fabrication of copper interconnects. The present work focuses on certain electroanalytical aspects of evaluating slurry materials of CMP to aid the new processing strategies for the sub-22 nm technology nodes. The test slurry uses sodium percarbonate, sodium bicarbonate, benzotriazole and colloidal silica as an oxidizer, a complexing additive, a dissolution inhibitor, and an abrasive agent, respectively. The experiments employ open circuit potential transients, voltammetry and impedance spectroscopy, along with tactically applied tribological conditions appropriate for processing Ru barrier lines. The removal of surface materials is based on controlled tribo-corrosion, while the effects of dissolution and galvanic corrosion are suppressed. The results of the different measurements are analyzed in a combined framework of mixed potential effects to probe the underlying mechanisms of material removal and corrosion suppression.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
