Abstract
A crystalline BiFeO3 (BFO) heteroepitaxial film was produced by mild hydrothermal epitaxy on a Nb–SrTiO3(100) (NSTO) substrate. The resulting coated substrate was used to fabricate a Pt/BFO/NSTO heterostructure device. The device exhibits reversible bipolar resistive switching behavior. The resistance states can be reversibly switched among multiple levels, by changing the magnitude of the reset pulse voltage. This illustrates the devices potential in multilevel nonvolatile memory devices. The resistive switching behavior of the device is attributed to trap-controlled space-charge-limited current conduction, which is controlled by oxygen vacancies in the film. The modulation of the Pt/BFO Schottky-like junction depletion under an applied electric field is thought to be responsible for the resistance switching behavior of the device, in the carrier injection-trapped/detrapped process.
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