Abstract
The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology. Focal plane arrays (FPAs) based on thermal detectors are presently used in staring thermal imagers operating at room temperature. However, their performance is modest; thermal detectors exhibit slow response, and the multispectral detection is difficult to reach. Initial efforts to develop high operating temperature (HOT) photodetectors were focused on HgCdTe photoconductors and photoelectromagnetic detectors. The technological efforts have been lately directed on advanced heterojunction photovoltaic HgCdTe detectors. This paper presents the several approaches to increase the photon-detectors room-temperature performance. Various kinds of materials are considered: HgCdTe, type-II AIIIBV superlattices, two-dimensional materials and colloidal quantum dots.
Highlights
IR detector technology combined with fabrication of epitaxial heterostructure [by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD)] and photolithographic processes revolutionized the semiconductor industry, enabling the design and fabrication of complex focal plane arrays (FPAs)
At current status of technology, the performance of both types of photodetectors is inferior in comparison with HgCdTe photodiodes
colloidal quantum dot (CQD) photodetectors characterized by multicolor sensitivity and detectivity comparable to InGaAs detectors have been located at the good position in IR material family at present time
Summary
IR detector technology combined with fabrication of epitaxial heterostructure [by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD)] and photolithographic processes revolutionized the semiconductor industry, enabling the design and fabrication of complex focal plane arrays (FPAs). Further their development will relate to implementation of fourth generation staring systems, which the main features are to be: high resolution (pixels > 108 ), multi-band detection, three-dimensional readout integration circuits (3D ROIC), and other integration functions such as polarization/phase sensitivity, better radiation/pixel coupling or avalanche multiplication. Initial efforts in development of the high operating temperatures (HOT) photodetectors were focused on HgCdTe photoconductors and photoelectromagnetic detectors [6]. Theoretical estimates are collated with experimental data for different photodetectors
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