Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in GaN, GaP, GaAs, and GaSb

Abstract

We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, it is found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series.