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Abstract
The RIPE (Resonant Inductive Plasma Etcher) uses inductively coupled radio frequency power to generate a high density plasma at low pressure. Its capabilities in fluorine plasmas have already been demonstrated [1]. To satisfy all basic requirement for pattern transfer, Hbr chemistry for trench and polysilicon etching has been tested in a pressure range1 to10 μbar. This work is related to the study of a trench process etch in HBr chemistry. Good profiles with high etch rate (0.7 μm/min) and high selectivity with respect to the SiO2 (12:1 to 100:1) are presented.
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