Abstract
This paper proposes and develops a new technique based on low temperature conductance method to quantitatively evaluate the trap densities around NiGe/Ge Schottky junction interface and their time constants. It is found that the Schottky barrier height (SBH) in the NiGe/Ge junction is related with these junction traps. Additionally, the traps around junction interface could strongly affect the electrical properties of Ge MOSFETs, especially the OFF-state currents.
Highlights
Ge has been attracting a lot of interests as the channel material for future CMOS technology, owing to its high bulk mobility [1]
To take the issue into account, this paper proposes and develops a new technique based on conventional low temperature conductance method to quantitatively evaluate the energy distribution of trap densities around the NiGe/Ge Schottky junction interface (Dt) and their time constants (τ )
In this study, the low temperature conductance method has been applied for the extraction of traps around Ge Schottky junction interface
Summary
Ge has been attracting a lot of interests as the channel material for future CMOS technology, owing to its high bulk mobility [1]. To take the issue into account, this paper proposes and develops a new technique based on conventional low temperature conductance method to quantitatively evaluate the energy distribution of trap densities around the NiGe/Ge Schottky junction interface (Dt) and their time constants (τ ). It can effectively avoid the influence from the minority carrier effect, because the measurement is always performed when the junction is in depletion and there is no minority carriers from the bulk semiconductor in this situation [26]. The admittance for conductance measurement in the reversely biased Schottky junction can be defined to be
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