Abstract
Thermally stimulated current measurements were made on MIM capacitors of sputtered SiO 2 and on SiO 2/CdSe thin film transistors. The peaks in the spectra were interpreted in terms of trapping states in the insulator and defect levels in the semiconductor. Fast interface and grain boundary states, if present, have densities below the detection level of 10 19 m -3.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
