Abstract
We present a diffusion-based simulation model for explanation of long time power-law decay of photoluminescence (PL) emission intensity in semiconductor nanoplatelets. In our model the shape of emission curves is an outcome of interplay of recombination, diffusion and trapping of excitons. At short times the excitons diffuse freely following the normal diffusion behaviour. The emission decay is purely exponential and is defined by recombination. At long times the transition into the subdiffusive motion happens and the emission occurs due to the release of excitons from surface traps. A power-law tail for intensity is a consequence of the release. The crossover from onelimit to another is controlled by diffusion properties. The approach reproduces the properties of experimental curves measured for different nanoplatelet systems.
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