Abstract
Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 μm) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based on multi-bias large-signal transient measurements, useful to characterize charge-trapping dynamics in terms of both capture and release mechanisms across the whole device safe operating area (SOA). From this dataset, characterizations, such as static-IV, pulsed-IV, and trapping time constants, are seamlessly extracted, thus allowing for the separation of trapping and thermal phenomena and delivering a complete basis for measurement-based compact modeling. The approach is applied to different state-of-the-art GaN HEMT commercial technologies, providing a comparative analysis of the measured effects.
Highlights
Introduction for MillimeterWave ApplicationsThe advent of the 5G standard and its Frequency Range 2 (FR2) implementation in theKa-band has recently prompted the development of advanced semiconductor technologies necessary to provide suitable radio-frequency (RF) power, linearity, and efficiency in the millimeter-wave frequency range
High-electron mobility transistors (HEMT) technologies based on Gallium Nitride (GaN) are investigated given their outstanding properties in terms of RF power density, high cut-off frequency ( f t ), and the capability to efficiently dissipate heat [1]
Despite the attention dedicated to 0.25-μm GaN high-electron mobility transistors (HEMT), a relatively small amount of literature data is available for performance assessment and compact modeling of sub-0.15-μm devices [11,12,13,14,15]
Summary
The advent of the 5G standard and its Frequency Range 2 (FR2) implementation in the. Ka-band has recently prompted the development of advanced semiconductor technologies necessary to provide suitable radio-frequency (RF) power, linearity, and efficiency in the millimeter-wave frequency range. Other approaches include swept two-tone test at variable frequency spacings around the RF carrier [13,34], or pulsed-RF radar-like excitation and the measurement of the subsequent RF power or drain current transients [13,16,20] These methods can only provide a local behavioral description around the imposed steady-state conditions and might, as well, reveal contradicting information on the time constants [13].
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