Abstract
Electron and hole trapping and detrapping have been investigated in new SIMOX buried oxides of different thicknesses (80 to 400 nm) after X-ray irradiation. Isochronal annealing and thermally stimulated current results are presented along with trap densities and cross section values extracted from static measurements on n-channel MOSFETs. The charge trapping properties are shown to be similar in the different SIMOX oxides. Charge detrapping results show the extension of the trapped charge distribution towards higher energy than in thermal SiO/sup 2/.
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