Abstract
Abstract The leakage current density-voltage properties of HfO2 high-k dielectrics annealed at different temperatures and the current conduction mechanisms under gate injection were studied in details. It is found that the leakage currents are mostly associated with the high trap density at the interface of Au/HfO2 under gate injection, and the dominant conduction mechanisms of Au/HfO2/p-Si structure are the Schottky emission and Poole-Frenkel mechanism in the region of high electric fields. To study the reliability of the gate dielectric film, the capacitors were stressed at constant voltages under gate injection. Time dependent dielectric breakdown (TDDB) can be observed due to the formation of a percolation cluster under constant voltage stress.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
