Abstract
We have studied the trapped magnetic field properties on doped MgB2 bulk with Ti (nominal content was Mg:Ti =0.9:0.1 and 0.8:0.2). The trapped magnetic field, BT, was enhanced by approximately 1.3 times from 2.6 T of the pristine bulk to 3.5 T of the Ti-doped bulks at 15K. The extrapolated BT(T ) curve reached 5 T below 4.2K, indicating that 5 T class bulk magnet can be realized using MgB2 with Ti-doping. The critical current density, Jc, under the magnetic field was also enhanced by Ti-doping, therefore, an irreversibility field, Birr, of the Ti-doped bulks exceeded 5 T at 20K. Ti and TiB2 impurities confirmed by the pow- der X-ray diffraction acted as the pinning centers and resulted in the enhancement of the trapped field and the critical current density.
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