Abstract
Undoped and Erbium (Er) doped In2O3 (In2O3:Er) thin films (TFs) were deposited on p-Si (100) substrates by sol-gel spin coating technique followed by open-air annealing. Gold (Au) Schottky contact based devices showed lower ideality factor and higher barrier height for the In2O3:Er in comparison with the undoped one. The enhanced photocurrent for the In2O3:Er TFs makes it more photosensitive than undoped In2O3 TFs. The responsivity curve shows a blue shift in near band edge absorption for the In2O3:Er TFs. As a whole, there was a reduction in trap density with the incorporation of Er into In2O3 lattice and room temperature photo responsivity curves can be directly used to track the trap-related optoelectronic properties of a light-sensitive material.
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