Abstract
Frequency-dependent conductance measurement has been carried out for polycrystalline chemically vapour-deposited diamond films. It is found that the electrical conduction in annealed diamond films consists of frequency-independent band conduction dominating in a low frequency range, hopping conduction with f 0.8 behaviour in a high frequency range and frequency-dependent conduction relating to thermal emission of carriers from trap levels. The frequency-dependent conductance can allow us to estimate the activation energy of trap levels. Three trap levels with activation energies of 0.62, 1.38 and 0.95 eV are found in undoped films. It is observed that the 0.62 and 1.38 eV trap levels are inactive in hydrogenated diamond films. In boron-doped films, on the contrary, the activation energy of the boron acceptor level is 0.39 ± 0.05 eV over a wide range of low boron concentrations from 1 × 10 17 to 3 × 10 18 cm −3.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
