Trap-Related Reliability Problems of Dielectrics in Memory Cells

Hiroshi Watanabe,Hsin-Jyun Lin

doi:10.3390/electronics10111287

Hiroshi Watanabe, Hsin-Jyun Lin

Open Access

https://doi.org/10.3390/electronics10111287

Copy DOI

Journal: Electronics	Publication Date: May 28, 2021
Citations: 1	License type: CC BY 4.0

Affiliation: National Yang Ming Chiao Tung University

Abstract

A basic mechanism for storing data in memory cells is to record changes in electronic charges, material phases, resistivities, magnetic properties, and so forth. The change in electronic charge has been widely used in the majority of mass-produced memories, such as dynamic random-access memory (DRAM), static random-access memory (SRAM), NOR Flash, and NAND Flash. Other emerging memories have collected widespread attention for acquiring extra advantages which cannot be achieved using the change in electronic charge. Many years of studies have told us that reliability problems are critically important in the development of both conventional and emerging memories, in order to improve the product yield. However, the topics related to these problems are too wide to cover in these limited pages. In this review chapter, we address several interesting examples of trap-related problems in dielectrics for use in various memory cells. For engineering purposes, it is very important to grasp the relation of the achieved physical intuitions and electronic characteristics of dielectrics.

Highlights

There are two major innovations that human being have made since the appearance of mankind
We proposed the formulae to eliminate sample variations from measured transient gate leakage current flowing through stacking oxide films
We could analyze the discrete electronic perturbations which are seen in measured transient gate leakage current

Summary

Introduction

There are two major innovations that human being have made since the appearance of mankind. During the period that we process information by ∑i pi lnpi at T, we consume energy at least by |∆E|min By shortening this period following device scaling [1], we have so far improved the efficiency of information communication. This tells us that the minimum energy that we consume per time unit, named the lower bound of power consumption, increases with the efficiency of information communication. This may be due to emerging applications in data intensive technologies such as artificial intelligence, Electronics 2021, 10, 1287 of breaking the balance of efficiency improvement and the growth in energy use demands This may be due to emerging applications in data intensive technologies such as artificial intelligence, automotive, and the internet-of-things.

Electronic Perturbation Is Very Small and Discrete

What is a Local Trap?

Trap-Related Phenomena

Power Spectrum Analysis of Discrete Electronic Perturbations

20. Extracted

Conclusions