Abstract
We have investigated band gap states in tris(8-hydroxyquinoline) aluminum on fabricated indium tin oxide∕Alq3∕LiF∕Al devices by using a deep-level optical spectroscopy (DLOS) technique. DLOS measurements after double-carrier injection into the Alq3 layer revealed a discrete trap level located at ∼1.39eV below the lowest unoccupied molecular orbital band. The pronounced 1.39eV level is attributable to an intrinsic nature of Alq3 and can be active as an efficient generation-recombination center that may impact the photophysical properties. Additionally, the effective band gap of the Alq3 layer became narrow from 3.05to2.80eV with increasing double-carrier injection rate.
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