Abstract
Electron impact ionization rates for an impurity-related electron trapping center in amorphous SiO2 films have been determined. These rates were obtained from analyses of trap population kinetics during uv-stimulated photocurrent injection. The dependence of the impact ionization rate αN on accelerating electric field E has been parameterized: αN = 25 exp(−1.5/E) cm−1, for E in MV/cm. This expression is the statistical average of results from three MOS specimens with a mean volume-averaged trapping state density N ≈5×1013 cm−3.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
