Abstract
We show that the first derivative (dIB/dV) of the ballistic electron emission spectroscopy (BEES) current contains information on trap energy levels in graphene-oxide (GO). The devices were sandwiched in an Au/GO/modified-silicon (Au/GO/m-Si) stack. The extracted trap energy levels correlate well with the GO density of states measurements. Since trap states play an important role in charge transport through GO, our results provide relevant insights for graphene-related electronic engineering.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
