Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction

P C (Brent) Hsu,A Alian,E Simoen,C Merckling,G Eneman,M Heyns,N Collaert,R Langer

doi:10.1088/1742-6596/1190/1/012014

P C (Brent) Hsu, A Alian + Show 6 more

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https://doi.org/10.1088/1742-6596/1190/1/012014

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Abstract

Several In.53Ga.47As p+n junctions with various extended defect densities (EDDs) have been grown by metalorganic vapor phase epitaxy (MOVPE), by carefully controlling the growth conditions. After fabrication, T-dependent J-V, C-V and double DLTS (DDLTS) are performed to extract the electrical field dependence of the extended defect levels. From this characterization, it is derived that the extended defects dominate the electrical field enhancement factor Г regardless of the value of the EDD and significantly increases the leakage current under reverse bias (i.e., decrease the Shockley-Read-Hall lifetime). These impacts are strongly connected to a “band-like” density of states of extended defects E2 at EC-0.32 eV by comparing the DDLTS and T-dependent J-V characteristics. On the other hand, the reference sample (without EDs) surprisingly exhibits an even stronger field dependence with lower leakage current. Nevertheless, no straightforward candidate point defects can be found in this sample and the possible explanation are discussed.

Highlights

High saturation velocity and electron mobility make In.53Ga.47As ternary alloys promising materials for several applications like high electron mobility transistors (HEMTs)
It is derived that the extended defects dominate the electrical field enhancement factor Г regardless of the value of the extended defect densities (EDDs) and significantly increases the leakage current under reverse bias
These impacts are strongly connected to a “band-like” density of states of extended defects E2 at EC0.32 eV by comparing the double DLTS (DDLTS) and T-dependent J-V characteristics

Summary

Introduction

High saturation velocity and electron mobility make In.53Ga.47As ternary alloys promising materials for several applications like high electron mobility transistors (HEMTs). As a result, understanding the impacts of these crystalline defects on the electrical device performance and reliability is key to their successful development and integration on silicon substrates. Deep level traps are well-known to degrade the device performance by forming efficient generation and recombination centers within the forbidden energy band. People are still struggling to reconstruct this 1D-DOS for different defects of various materials, and the interaction between the external electrical field and the internal electrical field by the charged dislocation core states is still unclear, motivating the study of the connection between extended defects and the electrical field dependence in the InxGa1-xAs ternary system.

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Results and discussion