Abstract
Electric noise characteristics of a triple-heterojunction AlGaAs/GaAs/AlAs/GaAs structure are measured at 10 GHz frequency for the electric field (≤ 1.3 kV/cm) applied in the interface plane. The maximum in the dependence of the longitudinal diffusion coefficient (deduced from the spectral density of current fluctuations) is observed at 1 kV/cm and interpreted as being brought about by back-and-forth transverse tunnelling of hot electrons between the quantum wells separated by a thin AlAs barrier, the wells being characterized by different electron mobility. The tunnelling time constant is found from the height of the maximum and, independently, from the quenching of the maximum in short samples.
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