Transverse spatio-temporal instabilities in the double barrier resonant tunneling diode

Abstract

We derive a simple self-consistent model for the double-barrier resonant tunneling diode, which describes the Z-shaped current–voltage characteristic and includes the transverse re-distribution of electrons in the quantum well. In particular, we predict different regimes of spatio-temporal dynamics: stable uniform or filamentary current flow, and laterally uniform or nonuniform self-sustained current oscillations. Switching between the two stable uniform steady states ( on and off) is explained in terms of transverse trigger fronts. Complex chaotic scenarios including spatio-temporal spiking are found.